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Proceedings Paper

The Design, Characterization, and Implementation of a One Micron Lithography Process in a High Volume Manufacturing Line
Author(s): Jamie S. Van De Ven; Joseph C. Langston
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Paper Abstract

The design of a manufacturable, cost effective one micron lithography process requires locating and optimizing the largest manufacturing window of focus, exposure, and bias for each critical cd layer. Special attention must be paid to the resist and thin film coupling effects on critical dimensions and resist clear point, Eo. Similar characterization and optimization must be performed for registration control as well. This paper explores optimization techniques that proved successful in determining the process parameters which yield the best manufacturing tolerances. Distribution centering techniques will also be discussed as well as the key approaches to implementing a process which does not require any lot dependent adjustments or test wafers. The case for non-adjustment processing can not be overstated for if the process is constantly "tweaked" for exposure or offsets, stability and control is impossible and so is low cost, high output production. The steps to use in designing, characterizing and controlling a no-adjust lithography process are outlined in this paper.

Paper Details

Date Published: 25 July 1989
PDF: 17 pages
Proc. SPIE 1088, Optical/Laser Microlithography II, (25 July 1989); doi: 10.1117/12.953142
Show Author Affiliations
Jamie S. Van De Ven, Intel Corporation (United States)
Joseph C. Langston, Intel Corporation (United States)


Published in SPIE Proceedings Vol. 1088:
Optical/Laser Microlithography II
Burn Jeng Lin, Editor(s)

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