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Proceedings Paper

Effect of Stepper Resolution on the Printability of Submicron 5x Reticle Defects
Author(s): James N. Wiley
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Paper Abstract

To determine the effect of wafer stepper resolution on the printability of reticle defects, a test reticle containing edge-related submicron programmed defects was printed using 0.35, 0.43, 0.45 and 0.54 NA g-line 5x steppers. The size of the minimum printable defect was determined by examining the wafer photoresist images using both optical and scanning electron microscopes. Photographs show the effect of submicron defects located on or near geometry edges. Submicron reticle defects affected critical dimensions, image profiles and resist thickness in a 1.5 λ/ NA diameter "sphere of influence" on the wafer. The higher resolution, higher NA steppers printed smaller defects. Defocus was observed to increase the damage caused by printed defects.

Paper Details

Date Published: 25 July 1989
PDF: 16 pages
Proc. SPIE 1088, Optical/Laser Microlithography II, (25 July 1989); doi: 10.1117/12.953134
Show Author Affiliations
James N. Wiley, KLA Instruments Corporation (United States)


Published in SPIE Proceedings Vol. 1088:
Optical/Laser Microlithography II
Burn Jeng Lin, Editor(s)

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