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Proceedings Paper

Photomask Limitations And Directions
Author(s): John G. Skinner
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Paper Abstract

In the vast world of integrated circuits mask making is often taken for granted. This was particularly true a decade ago when the availability of a commercial a-beam machine, MEBES, considerably improved the accuracy of photomasks and simplified the manufacturing process. At present we have the capability to meet today's needs [~ 0.9 micron design rules] but we do not have the capabilities for the next reduction in design rules [~ 0.5 micron in ~1990/1]. Pattern generators, resist, measuring equipment, and defect detection are all suspect as we push photomask tolerances into the sub-micron region. This talk will review some of the limitations in today's photomask fabrication and some of the opportunuities that lie ahead.

Paper Details

Date Published: 25 July 1989
PDF: 10 pages
Proc. SPIE 1088, Optical/Laser Microlithography II, (25 July 1989); doi: 10.1117/12.953129
Show Author Affiliations
John G. Skinner, AT&T Bell Laboratories (United States)


Published in SPIE Proceedings Vol. 1088:
Optical/Laser Microlithography II
Burn Jeng Lin, Editor(s)

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