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Proceedings Paper

Scanning Photon And Scanning Electron Metrology On Photomasks
Author(s): Robert H. J. Fastenau; Kevin M. Monahan; Barry J. Jennings; Martin J. Verheijen
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Paper Abstract

Resist and chromium features on electron beam generated photomasks ranging from 0.4 to 10. μm were measured with a classical scanning slit optical microscope, a confocal scanning laser microscope and a low -voltage scanning electron microscope. The scanning slit microscope was used in a calibrated way. The results obtained with those instruments are compared mutually and with the designed values. The accuracy of the measurements is evaluated using a model for electron beam exposure of resist in order to explain trends observed in the measurements. The results show that these systems can be used for mask metrology of sub -micron features with mutual differences of about 10 nm. The resolution limit of the optical systems appeared to be 0.4 μm.

Paper Details

Date Published: 19 July 1989
PDF: 14 pages
Proc. SPIE 1087, Integrated Circuit Metrology, Inspection, and Process Control III, (19 July 1989); doi: 10.1117/12.953106
Show Author Affiliations
Robert H. J. Fastenau, Philips Research Laboratories / Signetics Company (United States)
Kevin M. Monahan, Philips Research Laboratories / Signetics Company (United States)
Barry J. Jennings, Philips Research Laboratories (The Netherlands)
Martin J. Verheijen, Philips Research Laboratories (The Netherlands)

Published in SPIE Proceedings Vol. 1087:
Integrated Circuit Metrology, Inspection, and Process Control III
Kevin M. Monahan, Editor(s)

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