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Proceedings Paper

Process Sensitivity Analysis: Application to Photolithography
Author(s): Philippe Schoenborn; Nicholas F. Pasch
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Paper Abstract

A computer program has been developed for the purpose of estimating process sensitivity and improving process robustness. In this paper the linewidth of polysilicon gates as a function of the photolithographic process parameters is analyzed. First, a model of the linewidth is obtained using the method of Statistical Design of Experiments and the Response Surface Methodology (RSM). Using such models, the program computes the breadth of linewidth variations that can result from simultaneous variations in the process parameters. This method of doing the sensitivity analysis offers significant advantages over one-parameter at a time studies, Taguchi methods, and contour plots of desirability regions.

Paper Details

Date Published: 19 July 1989
PDF: 9 pages
Proc. SPIE 1087, Integrated Circuit Metrology, Inspection, and Process Control III, (19 July 1989); doi: 10.1117/12.953101
Show Author Affiliations
Philippe Schoenborn, LSI Logic Corporation (United States)
Nicholas F. Pasch, LSI Logic Corporation (United States)


Published in SPIE Proceedings Vol. 1087:
Integrated Circuit Metrology, Inspection, and Process Control III
Kevin M. Monahan, Editor(s)

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