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Proceedings Paper

A Systematic Approach for I-line Manufacturing Process Optimization
Author(s): Khoi Phan; Michael Templeton; Edwin Sum
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Paper Abstract

A framework for process optimization and characterization was discussed and applied to the development of an 0.8μm i-line lithography process for CMOS manufacturing. Response surface and characterization data were presented. Metrics for process optimization were discussed. Depth of focus windows for i-line and g-line lithography were compared for resist materials of similar capability run with optimized processes. Depth of focus data on 3 different stepper types were used to draw conclusions: a 0.38 NA g-line and 0.40 NA i-line from Manufacturer 1, and a 0.48 NA g-line from Manufacturer 2. I-line resists from 2 different manufacturers were seen to have similar depth of focus characteristics. Maintaining acceptable wall angle for the resist profile was found to be a more severe constraint on the depth of focus than maintaining critical dimension control. The i-line resist offered better wall angle than g-line resist, but less global process stability. At center of field, i-line lenses and currently available i-line resists have effectively 10 to 20% more depth of focus than g-line lenses and g-line resists at comparable resolution.

Paper Details

Date Published: 19 July 1989
PDF: 11 pages
Proc. SPIE 1087, Integrated Circuit Metrology, Inspection, and Process Control III, (19 July 1989); doi: 10.1117/12.953100
Show Author Affiliations
Khoi Phan, Advanced Micro Devices, Inc. (United States)
Michael Templeton, Advanced Micro Devices, Inc. (United States)
Edwin Sum, Advanced Micro Devices, Inc. (United States)


Published in SPIE Proceedings Vol. 1087:
Integrated Circuit Metrology, Inspection, and Process Control III
Kevin M. Monahan, Editor(s)

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