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Proceedings Paper

Characterization Of A UV Resist for 248 nm Lithography
Author(s): Yosi Y. Shacham-Diamand; William N. Partlo; William G. Oldham
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Paper Abstract

A study is presented of the performance of a Novolak-resin naphtoquinone-diazide sensitized resist exposed in the deep-UV. The material under study is PR-1024MB-600, designed for exposure in the UV (280-340 nm) range, including the i-line and h-line as well as deep UV (248 nm). The A, B, C exposure parameters of the photoresist have been measured at 248 nm. Classical bleaching characteristics are observed at low energy; the photoresist transmittance increases with dose. At higher doses the photoresist transmittance decreases, suggesting UV radiation effects on the resin. A model for the behavior and the associated parameter-extraction method for the UV transmittance versus dose in the presence of a variable resin absorbence are proposed. The development characteristics of the photoresist exposed at 248 nm are meas-ured and the results for exposure with less than 5 mJ/cm2/pulse and total dose less than 1 f/cm2 show normal positive pho-toresist characteristics. Higher total dose, with low energy per pulse yields a negative tone mode. This tone reversal behavior suggests UV-induced cross-linking. Exposure using high pulse energies (> 25 mlicm2 per pulse) also yields a negative tone response. Thermal calculations suggest a heating effect. The image reversal performance of the PR-1024MB resist with addition of low-volatility amines is also demonstrated. Under similar conditions the image reversal process is 10-20 times more sensitive than in positive tone operation. In image reversal the deep-UV photoresist contrast exceeds 2, larger than the value observed in the normal mode.

Paper Details

Date Published: 30 January 1989
PDF: 13 pages
Proc. SPIE 1086, Advances in Resist Technology and Processing VI, (30 January 1989); doi: 10.1117/12.953063
Show Author Affiliations
Yosi Y. Shacham-Diamand, University of California, Berkeley (United States)
William N. Partlo, University of California, Berkeley (United States)
William G. Oldham, University of California, Berkeley (United States)


Published in SPIE Proceedings Vol. 1086:
Advances in Resist Technology and Processing VI
Elsa Reichmanis, Editor(s)

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