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Proceedings Paper

A New Mid-UV Resist With Oxygen Plasma Resistance
Author(s): J. M. Liu; C. H. Tzeng
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Paper Abstract

A new silyl ether of resorcinol novolak resin (SERN) and a new photoactive compound (S-55NQ) have been developed for a bilayer resist system. The SERN resin is an addition-condensation type terpolymer from resorcinol, hexamethylenetetramine, and phenyl silyl ether (PSE), which is a reaction product of resorcinol and chlorosilane, under acid catalyzed condition. The S-55NQ sensitizer is a sulfonate ester of spiroglycol and naphthoquinone diazide. This alkaline soluble Si-containing resist, useful in the mid-UV region, shows high dry etching resistance to O2 plasma and O2 RIE. An etching rate ratio of 4.5 or higher based on HPR-204 as the bottom layer is obtained.

Paper Details

Date Published: 30 January 1989
PDF: 9 pages
Proc. SPIE 1086, Advances in Resist Technology and Processing VI, (30 January 1989); doi: 10.1117/12.953058
Show Author Affiliations
J. M. Liu, Industrial Technology Research Institute (Taiwan)
C. H. Tzeng, Industrial Technology Research Institute (Taiwan)


Published in SPIE Proceedings Vol. 1086:
Advances in Resist Technology and Processing VI
Elsa Reichmanis, Editor(s)

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