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Proceedings Paper

Ultrahigh Resolution Positive Working Photoresist For Half-Micron Photolithography
Author(s): Yoshiyuki Satoh; Hidekatsu Kohara; Nobuo Tokutake; Kohichi Takahashi; Toshimasa Nakayama
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Paper Abstract

Along with the increase in the integrations of IC's, the process dimensions of photolithography is proceeding to more and more fine patterns. In the fabrication of 16 Mega bit DRAM which is the next generation device, the photolithography will be required to have a technology close to half micron geometry work. The role to be played by photoresists in such geometry work is extremely large and important. Under such circumstance, we have developed ultrahigh resolution positive working photoresist, TSMR-V3 which can cope with a half micron photolithography.

Paper Details

Date Published: 30 January 1989
PDF: 5 pages
Proc. SPIE 1086, Advances in Resist Technology and Processing VI, (30 January 1989); doi: 10.1117/12.953047
Show Author Affiliations
Yoshiyuki Satoh, Tokyo Ohka Kogyo Co., Ltd. (Japan)
Hidekatsu Kohara, Tokyo Ohka Kogyo Co., Ltd. (Japan)
Nobuo Tokutake, Tokyo Ohka Kogyo Co., Ltd. (Japan)
Kohichi Takahashi, Tokyo Ohka Kogyo Co., Ltd. (Japan)
Toshimasa Nakayama, Tokyo Ohka Kogyo Co., Ltd. (Japan)

Published in SPIE Proceedings Vol. 1086:
Advances in Resist Technology and Processing VI
Elsa Reichmanis, Editor(s)

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