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Proceedings Paper

Fourier Transform Infrared Analysis of Resist Process and its Application.
Author(s): Chunshing Chen; Jen-Jiang Lee; Mike Blackwell; Chang-ou Lee; Wei Wu
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Paper Abstract

Fourier transform infrared (FUR) spectroscopy was used to study the effects of various resist process variables on the photospeed. Resist components which are responsible for photospeed changes were identified. The doublet peak around 2100 cm-1 , which corresponds to the diazo group of photoactime compound (PAC), was used for a quantitative measurement of PAC content. The peak at 1700 cm-1, which corresponds to the acetyl group of the solvent used in the resist, was used to measure the solvent content. The PAC is stable at low temperatures, but begins to decompose at 120°C. This temperature is called critical temperature. It was found that below the critical temperature, the solvent content and the resist-thickness-induced changes in reflectivity are the main factors affecting the photospeed. Above the critical temperature, PAC content is the main factor that affects photospeed. The above described technique was also used to study the kinetics of photochemical reactions during resist exposure, and the effect of fluorescent light on resist in a typical manufacturing area. The effects were found to be negligible for wafers in a black cassette and oriented parallel to the light rays, even when exposed for several hours.

Paper Details

Date Published: 30 January 1989
PDF: 10 pages
Proc. SPIE 1086, Advances in Resist Technology and Processing VI, (30 January 1989); doi: 10.1117/12.953045
Show Author Affiliations
Chunshing Chen, Advanced Products Research and Development Laboratory (United States)
Jen-Jiang Lee, Advanced Products Research and Development Laboratory (United States)
Mike Blackwell, Advanced Products Research and Development Laboratory (United States)
Chang-ou Lee, Advanced Products Research and Development Laboratory (United States)
Wei Wu, Advanced Products Research and Development Laboratory (United States)


Published in SPIE Proceedings Vol. 1086:
Advances in Resist Technology and Processing VI
Elsa Reichmanis, Editor(s)

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