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Proceedings Paper

New Pattern Transfer Technology For G-line Lithography
Author(s): M. Sasago; M. Endo; H. Nakagawa; K. Matsuoka; Y. Tani; Y. Hirai; N. Nomura
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Paper Abstract

New pattern transfer technology for G-line lithography has been developed. G-line lithography using steppers have become the main tool in the production of submicron design rule VLSI. To adapt G-line lithography for half-micron design rule VLSI production, we have developed new and simple pattern transfer technology. High contrast patterns and resolution were obtained in this technology. This was achieved by using a soak process to treat the resist surface before exposure in the conventional resist process. The surface treatment was done by dipping the wafer in a solution of tetramethyl ammonium hydroxide(TMAH) rather than a chlorobenzene solution. And also, we combined with new pattern transfer technology with CEL (contrast enhanced lithography) to control the aerial image. The resists were imaged by using G-line steppers with NA value of 0.54 and 0.45. The positive photoresists used were S1400(Shipley), TSMR-Vl(Tokyo Ohka) and TSMR-CRB2(Tokyo Ohka dyed resist). A conventional developer for positive photoresist was used for the surface treatment by TMAH alkaline solution. In this process, we have evaluated the baking step either before or after the image exposure in the conventional process in order to compare pattern profiles.

Paper Details

Date Published: 30 January 1989
PDF: 12 pages
Proc. SPIE 1086, Advances in Resist Technology and Processing VI, (30 January 1989); doi: 10.1117/12.953042
Show Author Affiliations
M. Sasago, Matsushita Electric Industrial Co., Ltd. (Japan)
M. Endo, Matsushita Electric Industrial Co., Ltd. (Japan)
H. Nakagawa, Matsushita Electric Industrial Co., Ltd. (Japan)
K. Matsuoka, Matsushita Electric Industrial Co., Ltd. (Japan)
Y. Tani, Matsushita Electric Industrial Co., Ltd. (Japan)
Y. Hirai, Matsushita Electric Industrial Co.. Ltd. (Japan)
N. Nomura, Matsushita Electric Industrial Co.. Ltd. (Japan)


Published in SPIE Proceedings Vol. 1086:
Advances in Resist Technology and Processing VI
Elsa Reichmanis, Editor(s)

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