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Proceedings Paper

Deep UV ANR Photoresists For 248 nm Excimer Laser Photolithography
Author(s): James W. Thackeray; George W. Orsula; Edward K. Pavelchek; Dianne Canistro; Leonard E. Bogan; Amanda K. Berry; Karen A. Graziano
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Paper Abstract

This paper describes the development of deep UV resist materials based on chemically amplified crosslinking systems for use in excimer laser photolithography at the KrF lasing wavelength of 248 nm. This work will describe the use of a transparent resin, polyp-vinyl)phenol, which has excellent plasma etch resistance and demonstrates high resolution (sub half-micron line-space pairs for a 1.0 micron thick film) when used in an Advanced Negative Resist (ANR) formulation, XP-8843. Under 140C post-exposure bake conditions, XP-8843 exhibits fast photospeed (15 mJ/cm2), high contrast (4.1), vertical sidewalls, and good process latitude.

Paper Details

Date Published: 30 January 1989
PDF: 14 pages
Proc. SPIE 1086, Advances in Resist Technology and Processing VI, (30 January 1989); doi: 10.1117/12.953015
Show Author Affiliations
James W. Thackeray, Shipley Co., Inc. (United States)
George W. Orsula, Shipley Co., Inc. (United States)
Edward K. Pavelchek, Shipley Co., Inc. (United States)
Dianne Canistro, Shipley Co., Inc. (United States)
Leonard E. Bogan, Rohm and Haas Co., Inc. (United States)
Amanda K. Berry, Rohm and Haas Co., Inc. (United States)
Karen A. Graziano, Rohm and Haas Co., Inc. (United States)

Published in SPIE Proceedings Vol. 1086:
Advances in Resist Technology and Processing VI
Elsa Reichmanis, Editor(s)

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