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Proceedings Paper

Visible Semiconductor Lasers
Author(s): D. P. Bour
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Paper Abstract

Short-wavelength semiconductor lasers will potentially lead to major improvements in the performance of optical data storage systems. The various approaches to making visible semiconductor lasers are reviewed, including II-VI and III-V compound semiconductor lasers, and frequency-doubled infrared lasers. Although it is anticipated that diode lasers constructed from II-VI compounds will become important in the future, high-performance diode lasers of AlGaInP, a high-bandgap III-V alloy, are presently available. Lasing wavelength is 650nm<2.<680nm, and typical threshold current densities are 1-3 kλ/cm2. Recent advances in the growth of quantum well device structures have resulted in significant performance improvements.

Paper Details

Date Published: 19 May 1989
PDF: 11 pages
Proc. SPIE 1078, Optical Data Storage Topical Meeting, (19 May 1989); doi: 10.1117/12.952743
Show Author Affiliations
D. P. Bour, David Sarnoff Research Center (United States)


Published in SPIE Proceedings Vol. 1078:
Optical Data Storage Topical Meeting
Gordon R. Knight; Clark N. Kurtz, Editor(s)

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