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Proceedings Paper

Million Cycle Overwritable Phase Change Optical Disk Media
Author(s): Takeo Ohta; Masami Uchida; Kazumi Yoshioka; Kazuo Inoue; Tetsuya Aiyama; Shigeaki Furukawa; Koichi Kotera; Suguru Nakamura
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Paper Abstract

GeTe-Sb2Te3-Sb pseudo ternary components alloy shows laser induced rapid crystallization and amorphous change phenomena. Films of non stoichiometric GeTe-Sb2Te3-Sb can be crystallized using laser pulses less than 100ns duration. The crystalline structure shows the cubic structure. The time it takes to laser crystallize varies Sb concentration. And increasing the Sb concentration leads to increased crystallization temperature. The crystallization temperature of 180 C and more than 1200h stable of acceleration test of 80C 80% RH environment. Thin film disk structure of 20nm active layer produce more than million cycle over-write BER(bit error rate) stability. I would like to discuss the degradation model of pinhole generation in phase change disk media.

Paper Details

Date Published: 19 May 1989
PDF: 9 pages
Proc. SPIE 1078, Optical Data Storage Topical Meeting, (19 May 1989); doi: 10.1117/12.952739
Show Author Affiliations
Takeo Ohta, Matsushita Electric Industrial Co.,Ltd. (Japan)
Masami Uchida, Matsushita Electric Industrial Co.,Ltd. (Japan)
Kazumi Yoshioka, Matsushita Electric Industrial Co.,Ltd. (Japan)
Kazuo Inoue, Matsushita Electric Industrial Co.,Ltd. (Japan)
Tetsuya Aiyama, Matsushita Electric Industrial Co.,Ltd. (Japan)
Shigeaki Furukawa, Matsushita Electric Industrial Co.,Ltd. (Japan)
Koichi Kotera, Matsushita Electric Industrial Co.,Ltd. (Japan)
Suguru Nakamura, Matsushita Electric Industrial Co.,Ltd. (Japan)


Published in SPIE Proceedings Vol. 1078:
Optical Data Storage Topical Meeting
Gordon R. Knight; Clark N. Kurtz, Editor(s)

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