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Proceedings Paper

Trap Characteristics In Large Area CCD Image Sensors
Author(s): F H Yang; M M Blouke; D L Heidtmann; B Corrie; L D Riley; H H Marsh
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Paper Abstract

Detailed measurements and characterization of trap behavior in large area CCDs have been performed. The effect of these defects is to cause a local decrease in the charge transfer efficiency in the affected pixel. Bias-temperature stressing of the device has lead to the conclusion that the source of the traps is in the dielectric. A model is proposed which can explain all the current data.

Paper Details

Date Published: 23 May 1989
PDF: 16 pages
Proc. SPIE 1071, Optical Sensors and Electronic Photography, (23 May 1989); doi: 10.1117/12.952521
Show Author Affiliations
F H Yang, Tektronix Inc (United States)
M M Blouke, Tektronix Inc (United States)
D L Heidtmann, Tektronix Inc (United States)
B Corrie, Tektronix Inc (United States)
L D Riley, Tektronix Inc (United States)
H H Marsh, Tektronix Inc (United States)

Published in SPIE Proceedings Vol. 1071:
Optical Sensors and Electronic Photography
Morley M. Blouke; Donald Pophal, Editor(s)

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