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Proceedings Paper

Reduction Of Reflection Losses In Solid-State Image Sensors
Author(s): C. H. L. Weijtens; W. C. Keur
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Paper Abstract

The whole image area of frame transfer charge coupled device ( FT-CCD ) image sensors is light sensitive. The sensitivity for short wavelengths, however, is limited by the presence of polycrystalline silicon ( poly-Si ) electrodes. This paper describes elements contributing to the improvement of the light sensitivity. It will focus on the reduction of reflectance losses.

Paper Details

Date Published: 1 May 1986
PDF: 7 pages
Proc. SPIE 0591, Solid-State Imagers and Their Applications, (1 May 1986); doi: 10.1117/12.952081
Show Author Affiliations
C. H. L. Weijtens, Philips Research laboratories (The Netherlands)
W. C. Keur, Philips Research laboratories (The Netherlands)

Published in SPIE Proceedings Vol. 0591:
Solid-State Imagers and Their Applications
Gilbert J. Declerck, Editor(s)

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