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Proceedings Paper

Astronomical Imaging With A Low Temperature InSb Charge Injection Device (CID)
Author(s): D. Rouan; F. Lacombe; D. Tiphene; D. Stefanovitch; D. Phan Van; M. Combes; P. Lena; J. P. Chatard; A. Lussereau
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Paper Abstract

Focal plane arrays built with indium antimonide charge injection device technology are made of a group of two coupled MIS capacitors which collect and store photon generated charge carriers. The selection of a site is accomplished by an X-Y decoding technique. This adressing method allows to read out arrays either sequentially or in group (line or area). For applications at 77 K SAT has developped bidimensionnal structures (8 x 8 and 32 x 32 elements). To extend their application to astronomy, structure parameters have been analysed at very low operating temperature and low backgrounds. For a temperature near 4 K, a saturation time over 10 seconds and a noise of 1400 carriers combined with great filling factor of the focal plane (> 80%) and the read-out efficiency (25 %), these values allow to plan the use of this device for efficient imaging. Low to very low background conditions are generally met in infrared astronomical experiments, especially in space where cold optics can be used. On the other hand very high sensitivities are required because of the weakness of the sources. Thus arrays cooled by liquid He are well adapted to such conditions since long integration times are allowed. Two prototypes of ground based infrared cameras using 8 x 8 and 32 x 32 InSb CID arrays have been developped and used on a 2 meter telescope at the "Observatoire du Pic du Midi". The systems are described and first results given. An infrared camera has been proposed by a consortium of european laboratories as a focal plane instrument for the Infrared Space Observatory project (ISO). First test results on noise, particle immmunity and integration time are given. This shows that a CID InSb array is an extremely serious candidate for such an application.

Paper Details

Date Published: 1 May 1986
PDF: 9 pages
Proc. SPIE 0590, Infrared Technology and Applications, (1 May 1986); doi: 10.1117/12.952005
Show Author Affiliations
D. Rouan, Observatoire de PARIS-MEUDON (France)
F. Lacombe, Observatoire de PARIS-MEUDON (France)
D. Tiphene, Observatoire de PARIS-MEUDON (France)
D. Stefanovitch, Observatoire de PARIS-MEUDON (France)
D. Phan Van, Observatoire de PARIS-MEUDON (France)
M. Combes, Observatoire de PARIS-MEUDON (France)
P. Lena, Observatoire de PARIS-MEUDON (France)
J. P. Chatard, Societe Anonyme de Telecommunications (France)
A. Lussereau, Societe Anonyme de Telecommunications (France)

Published in SPIE Proceedings Vol. 0590:
Infrared Technology and Applications
Lionel R. Baker; Andre Masson, Editor(s)

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