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Proceedings Paper

GaInAsSb/A1GaAsSb Injection Lasers For Remote Sensing Applications
Author(s): Siamak Forouhar; Jeffrey Cody; Joseph Katz
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Paper Abstract

Double heterostructures of InGaAsSb/AlGaAsSb quaternary alloys on (100) GaSb substrates were grown by the liquid phase epitaxy (LPE) technique. Room temperature operation near 2.1 μm wavelength has been achieved under pulsed conditions with pulsed threshold current density of 7kAcm-2.

Paper Details

Date Published: 25 July 1989
PDF: 5 pages
Proc. SPIE 1062, Laser Applications in Meteorology and Earth and Atmospheric Remote Sensing, (25 July 1989); doi: 10.1117/12.951859
Show Author Affiliations
Siamak Forouhar, California Institute of Technology (United States)
Jeffrey Cody, California Institute of Technology (United States)
Joseph Katz, California Institute of Technology (United States)


Published in SPIE Proceedings Vol. 1062:
Laser Applications in Meteorology and Earth and Atmospheric Remote Sensing
Martin M. Sokoloski, Editor(s)

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