Share Email Print
cover

Proceedings Paper

Photoresponse of 3-5 µm p-channel MISFETs
Author(s): S. C. Gupta; B. L. Sharma
Format Member Price Non-Member Price
PDF $14.40 $18.00
cover GOOD NEWS! Your organization subscribes to the SPIE Digital Library. You may be able to download this paper for free. Check Access

Paper Abstract

Photogenerated current at 77K, when the transparent gate of an Hgl-xCdxTe(x=0.29) and InSb p-channel MISFETs is illuminated with infrared radiation, have been evaluated theoretically as a function of gate voltage. To process of excitation are considered, namely, an electron-hole pair generation across the bandgap in the depletion layer of the field induced junction and an electron excitation through interface states at the semi-conductor-SiO2 interface. The photocurrent is primarily due to the later process. For sake of comparison, the drain-source current without illumination has also been calculated as function of gate voltage.

Paper Details

Date Published: 7 July 1986
PDF: 6 pages
Proc. SPIE 0588, Recent Developments in Materials & Detectors for the Infrared, (7 July 1986); doi: 10.1117/12.951768
Show Author Affiliations
S. C. Gupta, Solid State Physics Laboratory (India)
B. L. Sharma, Solid State Physics Laboratory (India)


Published in SPIE Proceedings Vol. 0588:
Recent Developments in Materials & Detectors for the Infrared
John S. Seeley; John S. Seeley, Editor(s)

© SPIE. Terms of Use
Back to Top