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Proceedings Paper

Photoresponse of 3-5 µm p-channel MISFETs
Author(s): S. C. Gupta; B. L. Sharma
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Paper Abstract

Photogenerated current at 77K, when the transparent gate of an Hgl-xCdxTe(x=0.29) and InSb p-channel MISFETs is illuminated with infrared radiation, have been evaluated theoretically as a function of gate voltage. To process of excitation are considered, namely, an electron-hole pair generation across the bandgap in the depletion layer of the field induced junction and an electron excitation through interface states at the semi-conductor-SiO2 interface. The photocurrent is primarily due to the later process. For sake of comparison, the drain-source current without illumination has also been calculated as function of gate voltage.

Paper Details

Date Published: 7 July 1986
PDF: 6 pages
Proc. SPIE 0588, Recent Developments in Materials & Detectors for the Infrared, (7 July 1986); doi: 10.1117/12.951768
Show Author Affiliations
S. C. Gupta, Solid State Physics Laboratory (India)
B. L. Sharma, Solid State Physics Laboratory (India)

Published in SPIE Proceedings Vol. 0588:
Recent Developments in Materials & Detectors for the Infrared
John S. Seeley; John S. Seeley, Editor(s)

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