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Proceedings Paper

Stressed Ge:Ga Photoconductor Technology
Author(s): C. Laverny; J. Leotin; C. Villarzel; J. R. Birch
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Paper Abstract

The technology of stress cell systems to accommodate gallium doped germanium photoconductors is presented. The novel feature of the cell is the inclusion of a miniaturized spring calibrated in situ. Stress control measurements were made at 4.2 K by optical and electrical photoconductor characterization.

Paper Details

Date Published: 7 July 1986
PDF: 5 pages
Proc. SPIE 0588, Recent Developments in Materials & Detectors for the Infrared, (7 July 1986); doi: 10.1117/12.951766
Show Author Affiliations
C. Laverny, Laboratoire de Physique des Solides (France)
J. Leotin, Laboratoire de Physique des Solides (France)
C. Villarzel, Laboratoire d' Optique Electronique (France)
J. R. Birch, National Physical Laboratory (England)


Published in SPIE Proceedings Vol. 0588:
Recent Developments in Materials & Detectors for the Infrared
John S. Seeley; John S. Seeley, Editor(s)

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