Share Email Print
cover

Proceedings Paper

Fabrication and Evaluation of InSb MIS Structure Prepared by Photo-Chemical Vapor Deposition
Author(s): Kai-feng Huang; J. S. Shie; J. J. Luo; J. S. Chen; S. J. Yang; S. L. Tu
Format Member Price Non-Member Price
PDF $14.40 $18.00
cover GOOD NEWS! Your organization subscribes to the SPIE Digital Library. You may be able to download this paper for free. Check Access

Paper Abstract

Thin silicon dioxide films were prepared by photo chemical vapor deposition. IR absorption and Auger electron spectroscopy have shown that the dominant components of the oxide are silicon and oxygen with little amount of hydrogen. MIS capacitors were constructed on InSb substrates. C-V characteristics of the MIS capacitors were measured, and mid-gap interface state density of low 1012 cm-2eV-1 was determined. The amount of hysteresis observed was found to be about 10% of the inversion bias voltage. Annealing studies were also conducted to improve the electrical properties. After annealing, mid-gap interface state density was reduced to 5x10-11 cm-2eV-1 and the amount of hysteresis reduced to 5% of the inversion bias voltage.

Paper Details

Date Published: 7 July 1986
PDF: 5 pages
Proc. SPIE 0588, Recent Developments in Materials & Detectors for the Infrared, (7 July 1986); doi: 10.1117/12.951755
Show Author Affiliations
Kai-feng Huang, National Chiao Tung University (R.O.C.)
J. S. Shie, National Chiao Tung University (R.O.C.)
J. J. Luo, National Chiao Tung University (R.O.C.)
J. S. Chen, National Chiao Tung University (R.O.C.)
S. J. Yang, Chung Shan Institute of Science & Technology (R.O.C.)
S. L. Tu, Chung Shan Institute of Science & Technology (R.O.C.)


Published in SPIE Proceedings Vol. 0588:
Recent Developments in Materials & Detectors for the Infrared
John S. Seeley; John S. Seeley, Editor(s)

© SPIE. Terms of Use
Back to Top