Share Email Print

Proceedings Paper

Orientation Of Thin Crystal Layer With Zincblende Structure Using Raman Scattering Extrema Method
Author(s): Huasheng Wu; Jiangen Wu; Fenyuan Qu
Format Member Price Non-Member Price
PDF $14.40 $18.00
cover GOOD NEWS! Your organization subscribes to the SPIE Digital Library. You may be able to download this paper for free. Check Access

Paper Abstract

Raman Scattering Extrema Method (RSEM), originally proposed by author, to determine the orientation of a thin layer with diamond structure, is extented to zincblende structure. The Raman scattering intensities of LO and TO phonons as functions of both the orientation of this layer and the polarization direction of the incident light have been derived for a zincblende-structured thin layer. Then the orientation of the layer is determined by means of the extrema of these functions. The obtained results for GaP wafers using this method is compared with that determined by the X-ray diffraction method.

Paper Details

Date Published: 5 July 1989
PDF: 11 pages
Proc. SPIE 1055, Raman Scattering, Luminescence and Spectroscopic Instrumentation in Technology, (5 July 1989); doi: 10.1117/12.951576
Show Author Affiliations
Huasheng Wu, Fudan University (China)
Jiangen Wu, Fudan University (China)
Fenyuan Qu, Fudan University (China)

Published in SPIE Proceedings Vol. 1055:
Raman Scattering, Luminescence and Spectroscopic Instrumentation in Technology
Fran Adar; James E. Griffiths; Jeremy M. Lerner, Editor(s)

© SPIE. Terms of Use
Back to Top