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Proceedings Paper

Raman And Photoluminescence Analysis Of Cd[sub]1-x[/sub]Mn[sub]x[/sub]Te Thin Films
Author(s): S. Perkowitz; Z. C. Feng; A. Erbil; R. Sudharsanan; K. T. Pollard; A. Rohatgi
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Paper Abstract

Cd1-xMnxTe films (thickness ~0.5 micron, x = 0.10 - 0.37) have beengrown Ey metalorganic chemical vapor deposition on commercial GaAs and glass substrates with and without buffer layers of CdTe and CdS for potential use in solar cells. Raman scattering and photoluminescence played an important role in characterizing and optimizing film quality. Raman methods established the relation between film quality and substrate type or growth temperature. Photoluminescence spectroscopy determined the percent of Mn in the as-grown films, displayed stress effects due to lattice mismatch and their dependence on substrate, and indicated the presence of defects.

Paper Details

Date Published: 5 July 1989
PDF: 9 pages
Proc. SPIE 1055, Raman Scattering, Luminescence and Spectroscopic Instrumentation in Technology, (5 July 1989); doi: 10.1117/12.951575
Show Author Affiliations
S. Perkowitz, Emory University (United States)
Z. C. Feng, Emory University (United States)
A. Erbil, Georgia Institute of Technology (United States)
R. Sudharsanan, Georgia Institute of Technology (United States)
K. T. Pollard, Georgia Institute of Technology (United States)
A. Rohatgi, Georgia Institute of Technology (United States)


Published in SPIE Proceedings Vol. 1055:
Raman Scattering, Luminescence and Spectroscopic Instrumentation in Technology
Fran Adar; James E. Griffiths; Jeremy M. Lerner, Editor(s)

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