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Proceedings Paper

Raman Scattering In II-VI Semiconductor Alloys And Superlattices
Author(s): Jose Menendez
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Paper Abstract

Raman scattering is a powerful tool for the investigation of II-VI compounds. In particular, scattering by longitudinal optical (LO) phonons shows very strong resonances associated with the increased ionicity and reduced screening in these materials as compared with III-V and group IV semiconductors. In alloys of II-VI compounds, resonance Raman scattering by LO phonons can be used for electronic band structure studies, including the determination of critical points and their broadening. More recently, the fabrication of II-VI superlattices has received much attention. These systems, which range from narrow gap superlattices to wide gap structures, cover an impressive range of possible technological applications. They pose new problems such as interdiffusion, strain distribution, band offsets, interband transition energies, etc. Raman scattering can be used to address all these questions. In this paper, I illustrate the applications of Raman scattering by reviewing resonance experiments on HgCdTe alloys and more recent Raman work on CdTe-ZnTe superlattices.

Paper Details

Date Published: 5 July 1989
PDF: 6 pages
Proc. SPIE 1055, Raman Scattering, Luminescence and Spectroscopic Instrumentation in Technology, (5 July 1989); doi: 10.1117/12.951573
Show Author Affiliations
Jose Menendez, Arizona State University (United States)

Published in SPIE Proceedings Vol. 1055:
Raman Scattering, Luminescence and Spectroscopic Instrumentation in Technology
Fran Adar; James E. Griffiths; Jeremy M. Lerner, Editor(s)

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