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Proceedings Paper

Raman Scattering From Collective And Localized Excitations In Diluted Magnetic Semiconductors
Author(s): A. K. Ramdas; S. Rodriguez
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Paper Abstract

Raman spectroscopy provides powerful insights into the novel physical properties of the tetrahedrally coordinated diluted magnetic semiconductors, the II-VI semiconductors with group II ions randomly replaced with transition metal ions like Mn2+, Co2+ or Fe2+. The technique is equally fruitful in the context of the special issues which arise in epilayers and superlattices of these semiconductors.

Paper Details

Date Published: 5 July 1989
PDF: 7 pages
Proc. SPIE 1055, Raman Scattering, Luminescence and Spectroscopic Instrumentation in Technology, (5 July 1989); doi: 10.1117/12.951570
Show Author Affiliations
A. K. Ramdas, Purdue University (United States)
S. Rodriguez, Purdue University (United States)


Published in SPIE Proceedings Vol. 1055:
Raman Scattering, Luminescence and Spectroscopic Instrumentation in Technology
Fran Adar; James E. Griffiths; Jeremy M. Lerner, Editor(s)

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