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Proceedings Paper

Atomistic Nature Of Molecular Beam Epitaxially Grown GaAs/Al[sub]x[/sub]Ga[sub]1-x[/sub]As - As Revealed In Luminescence And Raman Spectroscopies
Author(s): W. C. Tang; Pudong Lao; A. Madhukar
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Paper Abstract

The reliability of using commonly employed expressions for extracting the alloy concentration from Raman and photoluminescence peak energies is examined. Study of molecular beam epitaxically grown AlxGa1-xAs alloys shows disagreement in Al% of as large as 20% between the value derived from Raman data and that derived from PL data using these expressions. The atomistic nature of the heterostructure interface imperfection is examined through the study of single quantum well luminescence. Luminescence linewidth as a function of single quantum well width (dw) shows a dw-1 behavior and not the dw-3 behavior as predicted by the well-width-fluctuation model. This measured behavior brought out the importance of the fluctuation in the alloy concentration in both the lateral and growth directions arising from the kinectics of growth.

Paper Details

Date Published: 5 July 1989
PDF: 5 pages
Proc. SPIE 1055, Raman Scattering, Luminescence and Spectroscopic Instrumentation in Technology, (5 July 1989); doi: 10.1117/12.951569
Show Author Affiliations
W. C. Tang, University Of Southern California (United States)
Pudong Lao, University Of Southern California (United States)
A. Madhukar, University Of Southern California (United States)


Published in SPIE Proceedings Vol. 1055:
Raman Scattering, Luminescence and Spectroscopic Instrumentation in Technology
Fran Adar; James E. Griffiths; Jeremy M. Lerner, Editor(s)

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