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Proceedings Paper

Determination Of Donor And Acceptor Concentrations In GaAs By Electronic Raman Scattering And Selective Luminescence
Author(s): T. D. Harris; M. Lamont Schnoes
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Paper Abstract

Instrumental options for Raman spectroscopy in light of low noise, Si charged coupled device (CCD) detectors are discussed. The unique sensitivity of this detector in the wavelength interval between 0.8 and 0.98 um is shown. The potential advantages of employing diode laser excitation at wavelengths longer than 0.75 um for nonresonant vibrational Raman spectroscopy along with the available high throughput spectrometers at these wavelengths are delineated. The application of detection in this spectral region to quantitative determination of acceptor impurities in bulk semi-insulating GaAs is demonstrated. The improvement over excitation at 1.06 um is shown to exceed 104.

Paper Details

Date Published: 5 July 1989
PDF: 8 pages
Proc. SPIE 1055, Raman Scattering, Luminescence and Spectroscopic Instrumentation in Technology, (5 July 1989); doi: 10.1117/12.951565
Show Author Affiliations
T. D. Harris, AT&T Bell Laboratories (United States)
M. Lamont Schnoes, AT&T Bell Laboratories (United States)

Published in SPIE Proceedings Vol. 1055:
Raman Scattering, Luminescence and Spectroscopic Instrumentation in Technology
Fran Adar; James E. Griffiths; Jeremy M. Lerner, Editor(s)

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