Share Email Print
cover

Proceedings Paper

Raman Scattering And Photoluminescence Characterization Of ZnSe-ZnS[sub]x[/sub]Se[sub]1-x[/sub] Superlattices And ZnSe/GaAs Interfaces
Author(s): D. J. Olego; K. Shahzad
Format Member Price Non-Member Price
PDF $14.40 $18.00
cover GOOD NEWS! Your organization subscribes to the SPIE Digital Library. You may be able to download this paper for free. Check Access

Paper Abstract

Raman scattering in conjunction with photoluminescence spectroscopy were applied to investigate strain relaxation, lattice dynamics and band offsets in ZnSe-ZnSxSe1-x strained-layer superlattices, and the effects of a ZnSe overlayer on the optoelectronic properties of GaAs surfaces in ZnSe/GaAs heterostructures.

Paper Details

Date Published: 5 July 1989
PDF: 9 pages
Proc. SPIE 1055, Raman Scattering, Luminescence and Spectroscopic Instrumentation in Technology, (5 July 1989); doi: 10.1117/12.951564
Show Author Affiliations
D. J. Olego, North American Philips Corporation (United States)
K. Shahzad, North American Philips Corporation (United States)


Published in SPIE Proceedings Vol. 1055:
Raman Scattering, Luminescence and Spectroscopic Instrumentation in Technology
Fran Adar; James E. Griffiths; Jeremy M. Lerner, Editor(s)

© SPIE. Terms of Use
Back to Top