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Proceedings Paper

Raman Scattering And Photoluminescence Characterization Of ZnSe-ZnS[sub]x[/sub]Se[sub]1-x[/sub] Superlattices And ZnSe/GaAs Interfaces
Author(s): D. J. Olego; K. Shahzad
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Paper Abstract

Raman scattering in conjunction with photoluminescence spectroscopy were applied to investigate strain relaxation, lattice dynamics and band offsets in ZnSe-ZnSxSe1-x strained-layer superlattices, and the effects of a ZnSe overlayer on the optoelectronic properties of GaAs surfaces in ZnSe/GaAs heterostructures.

Paper Details

Date Published: 5 July 1989
PDF: 9 pages
Proc. SPIE 1055, Raman Scattering, Luminescence and Spectroscopic Instrumentation in Technology, (5 July 1989); doi: 10.1117/12.951564
Show Author Affiliations
D. J. Olego, North American Philips Corporation (United States)
K. Shahzad, North American Philips Corporation (United States)


Published in SPIE Proceedings Vol. 1055:
Raman Scattering, Luminescence and Spectroscopic Instrumentation in Technology
Fran Adar; James E. Griffiths; Jeremy M. Lerner, Editor(s)

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