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Proceedings Paper

Deep Blue And Ultraviolet E-Beam Pumped Semiconductor Lasers
Author(s): A. Nasibov; V. Kozlovaky; Ya. Skasyraky
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Paper Abstract

Semiconductor compounds ZnS_Sei , and ZnO are used as an active medium for e-beam pumped semiconductor lasers (BBPSVIT The plates of these compouds of 2-3 cm in diameter and about 20-30 um thickness with covered mirrors surfaces form the optical cavity of a 2-D scannable laser. The e-beam energy being 75 keV, the maximum power reached 5 Watts at the wavelength λ = 375 nm (ZnO BBPSL). With the use of these compounds the generation in the range 330-400 nm has been obtained.

Paper Details

Date Published: 1 June 1989
PDF: 4 pages
Proc. SPIE 1041, Metal Vapor Laser Technology and Applications, (1 June 1989); doi: 10.1117/12.951255
Show Author Affiliations
A. Nasibov, USSR Acad.Sci.(FIAN) (USSR)
V. Kozlovaky, USSR Acad.Sci.(FIAN) (USSR)
Ya. Skasyraky, USSR Acad.Sci.(FIAN) (USSR)

Published in SPIE Proceedings Vol. 1041:
Metal Vapor Laser Technology and Applications
Jin J. Kim; Randy Kimball; P. Jeffrey Wisoff, Editor(s)

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