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Proceedings Paper

Bipolar Transistor Fabrication Using Gas Immersion Laser Doping
Author(s): Kurt H. Weiner; Thomas W. Sigmon
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Paper Abstract

Gas. Immersion Laser Doping (GILD) is presented as a powerful process to fabricate emitter and base regions in narrow-base bipolar transistors. Characterization of maximum melt depth versus silicon surface melt time is performed. Results of this characterization demonstrate that surface melt time provides an accurate in-situ measurement of junction depth. The GILD process is then used to fabricate the emitter and active-base regions in simple bipolar transistors. Base widths ranging from 700Å to 1200Å are achieved. The transistors exhibit good electrical behavior with maximum forward current gains greater than 50.

Paper Details

Date Published: 1 June 1989
PDF: 5 pages
Proc. SPIE 1041, Metal Vapor Laser Technology and Applications, (1 June 1989); doi: 10.1117/12.951251
Show Author Affiliations
Kurt H. Weiner, Lawrence Livermore National Laboratory (United States)
Thomas W. Sigmon, Stanford University (United States)

Published in SPIE Proceedings Vol. 1041:
Metal Vapor Laser Technology and Applications
Jin J. Kim; Randy Kimball; P. Jeffrey Wisoff, Editor(s)

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