Share Email Print
cover

Proceedings Paper

High Current Gain GaAlAs-GaAs Heterojunction Bipolar Transistors for Monolithic Photoreceivers at 0.85 µm
Author(s): Haila Wang; David Ankri
Format Member Price Non-Member Price
PDF $14.40 $18.00

Paper Abstract

We report on the first monolithic integrated transimpedance photoreceiver operating at 0.85 µm wavelength using GaAlAs-GaAs heterojunction phototransistor (HPT) and heterojunction bipolar transistors (HBT). The design and the fabrication process are presented, taking into account the specific characteristics of high current gain-high speed HPT and HBT. Using 26 kΩ external feedback resistor the monolithic photoreceiver has a bandwidth of 80 MHz with a transimpedance gain of 7000 V/A and a sensitivity of -30 dBm. These preliminary results are very closed to the theoretical performances predicted for this circuit capable to operate for local network optical links at 140 Mbits with a sensitivity of -40 dBm.

Paper Details

Date Published: 9 July 1986
PDF: 7 pages
Proc. SPIE 0587, Fiber Optic Sources and Detectors, (9 July 1986); doi: 10.1117/12.951219
Show Author Affiliations
Haila Wang, Centre National d'Etudes des Telecommunications (France)
David Ankri, Centre National d'Etudes des Telecommunications (France)


Published in SPIE Proceedings Vol. 0587:
Fiber Optic Sources and Detectors
Jean-Pierre Noblanc, Editor(s)

© SPIE. Terms of Use
Back to Top