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Proceedings Paper

Electro-optic modulators in GaInAsP/InP
Author(s): J. Krauser; P. Albrecht; C. Bornholdt; W. Doldissen; U. Niggebrugge; H.-P. Nolting; M. Schlak
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Paper Abstract

The semiconductor material system InGaAsP on InP is being increasingly used for waveguide based electro-optic devices such as phase modulators, directional coupler modulators, and switches with the long term goal of opto-electronic monolithic integration. We have demonstrated the fabrication of long passive rib waveguides (RWG) with low optical losses (3dB/cm) in this material. Electro-optical light modulation was achieved employing a p-n junction. The linear, quadratic and cubic term of the electro-optic effect could be identified. Design rules for high efficiency modulators is proposed.

Paper Details

Date Published: 9 July 1986
PDF: 8 pages
Proc. SPIE 0587, Fiber Optic Sources and Detectors, (9 July 1986); doi: 10.1117/12.951218
Show Author Affiliations
J. Krauser, Heinrich-Hertz-Institut fur Nachrichtentechnik Berlin GmbH (FRG)
P. Albrecht, Heinrich-Hertz-Institut fur Nachrichtentechnik Berlin GmbH (FRG)
C. Bornholdt, Heinrich-Hertz-Institut fur Nachrichtentechnik Berlin GmbH (FRG)
W. Doldissen, Heinrich-Hertz-Institut fur Nachrichtentechnik Berlin GmbH (FRG)
U. Niggebrugge, Heinrich-Hertz-Institut fur Nachrichtentechnik Berlin GmbH (FRG)
H.-P. Nolting, Heinrich-Hertz-Institut fur Nachrichtentechnik Berlin GmbH (FRG)
M. Schlak, Heinrich-Hertz-Institut fur Nachrichtentechnik Berlin GmbH (FRG)


Published in SPIE Proceedings Vol. 0587:
Fiber Optic Sources and Detectors
Jean-Pierre Noblanc, Editor(s)

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