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Proceedings Paper

GaAs Integrated Laser And Electronic Circuit Technology
Author(s): F. Brillouet; A. Clei; N. Bouadma; R. Lefevre; R. Azoulay; F. Alexandre; N. Duhamel
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Paper Abstract

The integration technology of a ridge AlGaAs/GaAs waveguide laser grown by MOCVD and of a microelectronic circuit is described in two different configurations: a selective and a non-selective laser layers growth. The critical steps of the respective processes are then compared.

Paper Details

Date Published: 9 July 1986
PDF: 6 pages
Proc. SPIE 0587, Fiber Optic Sources and Detectors, (9 July 1986); doi: 10.1117/12.951216
Show Author Affiliations
F. Brillouet, Centre National d'Etudes des Telecommunications (France)
A. Clei, Centre National d'Etudes des Telecommunications (France)
N. Bouadma, Centre National d'Etudes des Telecommunications (France)
R. Lefevre, Centre National d'Etudes des Telecommunications (France)
R. Azoulay, Centre National d'Etudes des Telecommunications (France)
F. Alexandre, Centre National d'Etudes des Telecommunications (France)
N. Duhamel, Centre National d'Etudes des Telecommunications (France)


Published in SPIE Proceedings Vol. 0587:
Fiber Optic Sources and Detectors
Jean-Pierre Noblanc, Editor(s)

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