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Proceedings Paper

AlGaAs Optoelectronic Devices On Monolithic GaAs/Si Substrates
Author(s): T. H. Windhorn; G. M. Metze
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Paper Abstract

The use of optical interconnects in systems incorporating complex Si circuits could significantly reduce the number of wire interconnects required for such systems. One possible approach to the development of optical interconnects is the monolithic integration of AlGaAs optoelectronic devices and Si circuits. However, the differences in crystal properties between GaAs and Si present a severe impediment to the growth of high-quality GaAs on Si. This paper will review recent advances in lasers and other opto-electronic devices fabricated on MGS substrates.

Paper Details

Date Published: 9 July 1986
PDF: 6 pages
Proc. SPIE 0587, Fiber Optic Sources and Detectors, (9 July 1986); doi: 10.1117/12.951215
Show Author Affiliations
T. H. Windhorn, Massachusetts Institute of Technology (United States)
G. M. Metze, Massachusetts Institute of Technology (United States)

Published in SPIE Proceedings Vol. 0587:
Fiber Optic Sources and Detectors
Jean-Pierre Noblanc, Editor(s)

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