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Proceedings Paper

Germanium Avalanche Photodiodes for monomode application in the 1.3µm wavelength region
Author(s): Gerhard Ebbinghaus; Thomas Scherg
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Paper Abstract

Germanium p+n avalanche photodiodes with various diameters have been fabricated in order to investigate the change of the device properties with size. From SIMS profiles and reverse characteristics of test diodes appropriate diffusion conditions for the guard ring are derived. The dark current obtained from diodes 50µm in diameter is as low as 70nA at 90% of the breakdown voltage. At room temperature the multiplied fraction of the dark current can be lowered from 30nA to 6nA by reducing the diameter of the diodes from 100µm to 50µm. Although multiplication factors of M≈500 have been observed, the region with uniform gain shrinks with increasing multiplication. With a gain of M= 25 spot scans of the photo-response only show an area of 30um in diameter to exhibit almost uniform multiplication within the active area of a 50µm diode.

Paper Details

Date Published: 9 July 1986
PDF: 5 pages
Proc. SPIE 0587, Fiber Optic Sources and Detectors, (9 July 1986); doi: 10.1117/12.951213
Show Author Affiliations
Gerhard Ebbinghaus, Siemens Research Laboratories (Germany)
Thomas Scherg, Siemens Research Laboratories (Germany)


Published in SPIE Proceedings Vol. 0587:
Fiber Optic Sources and Detectors
Jean-Pierre Noblanc, Editor(s)

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