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Proceedings Paper

InP based heterojunction photodiodes for high bit rate communications in the 1µm - 1.6µm wavelength range
Author(s): J. Benoit; M. Boulou; R. Vergnaud
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Paper Abstract

This paper reviews the general requirements for the design and technology of InP/In1-xGaxAsyP1-y PIN and avalanche detectors suitable for high speed and low level detection in the 1µm - 1.6µm wavelength region. Results on different type of InP based photodiodes are presented.

Paper Details

Date Published: 9 July 1986
PDF: 6 pages
Proc. SPIE 0587, Fiber Optic Sources and Detectors, (9 July 1986); doi: 10.1117/12.951212
Show Author Affiliations
J. Benoit, Laboratoires de Marcoussis (France)
M. Boulou, Laboratoires de Marcoussis (France)
R. Vergnaud, Laboratoires de Marcoussis (France)

Published in SPIE Proceedings Vol. 0587:
Fiber Optic Sources and Detectors
Jean-Pierre Noblanc, Editor(s)

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