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Proceedings Paper

InGaAs pin Photodiodes and JFETs on InP:Fe Substrates for Optoelectronic IC's
Author(s): Helmut Albrecht
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Paper Abstract

The chip technology and properties of both JFETs and pin photodiodes designed for opto-electronic IC's in InGaAs material grown lattice-matched on semi-insulating InP:Fe substrate are presented. The p-n junction of the devices were fabricated by p-diffusion from Zn-doped spin-on films. For the chip technology a self-aligned process has been developed.

Paper Details

Date Published: 9 July 1986
PDF: 7 pages
Proc. SPIE 0587, Fiber Optic Sources and Detectors, (9 July 1986); doi: 10.1117/12.951211
Show Author Affiliations
Helmut Albrecht, Siemens Research Laboratories (Germany)

Published in SPIE Proceedings Vol. 0587:
Fiber Optic Sources and Detectors
Jean-Pierre Noblanc, Editor(s)

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