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Proceedings Paper

Monolithic Integration Of InGaAs PIN-FET : From simple concepts to an involved technology
Author(s): M. Allovon; L. Nguyen; J. C. Renaud; P. Blanconnier; F. Heliot; A. Scavennec
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Paper Abstract

The attractiveness of monolithic InGaAs PIN-FETs for high-speed, long haul optical transmissions at 1.3 -1,6 µm is presented. The requirements of monolithic integration of PIN photodiodes, junction FETs and biasing/feedback resistor are discussed and the fabrication process and operating characteristics of integrable PIN photodiodes and J-FETs grown by Molecular Beam Epitaxy 'are then given.

Paper Details

Date Published: 9 July 1986
PDF: 5 pages
Proc. SPIE 0587, Fiber Optic Sources and Detectors, (9 July 1986); doi: 10.1117/12.951210
Show Author Affiliations
M. Allovon, Centre National d'Etudes des Telecommunications (France)
L. Nguyen, Centre National d'Etudes des Telecommunications (France)
J. C. Renaud, Centre National d'Etudes des Telecommunications (France)
P. Blanconnier, Centre National d'Etudes des Telecommunications (France)
F. Heliot, Centre National d'Etudes des Telecommunications (France)
A. Scavennec, Centre National d'Etudes des Telecommunications (France)


Published in SPIE Proceedings Vol. 0587:
Fiber Optic Sources and Detectors
Jean-Pierre Noblanc, Editor(s)

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