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Proceedings Paper

MOCVD of CMT
Author(s): G. T. Jenkin; J. Thompson; M. J. Hyliands; K. T. Woodhouse; V. Vincent
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Paper Abstract

Avalanche photodiodes (APD) based on bulk grown Cd0.7Hg0.3Te ( λ = 1.55 µm) offer significant advantages over the diodes fabricated from group III-V and group IV semiconductors. Metal Organic Chemical Vapour Deposition (MOCVD) is a well established technique for the growth of CMT (CdxHgl-xTe) (0<x<1). The interdiffused multilayer process (IMP) has been implemented on a computer controlled MOCVD system to improve the compositional uniformity of epitaxial films grown by this technique. Currently, this technique is giving compositional uniformity of ≈3% over 1 cm2 on CdTe substrates.

Paper Details

Date Published: 9 July 1986
PDF: 10 pages
Proc. SPIE 0587, Fiber Optic Sources and Detectors, (9 July 1986); doi: 10.1117/12.951204
Show Author Affiliations
G. T. Jenkin, GEC Research Limited (UK)
J. Thompson, GEC Research Limited (UK)
M. J. Hyliands, GEC Research Limited (UK)
K. T. Woodhouse, GEC Research Limited (UK)
V. Vincent, GEC Research Limited (UK)


Published in SPIE Proceedings Vol. 0587:
Fiber Optic Sources and Detectors
Jean-Pierre Noblanc, Editor(s)

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