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Growth Of Quality Cd[sub]x[/sub]Hg[sub]1-x[/sub]Te Crystals For Infrared Devices By The Travelling Heater Method (THM)
Author(s): A. Durand; J. L. Dessus; T. Nguyen Duy
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Paper Abstract

The Travelling Heater Method has been applied to the crystal growth of CdxHgl-xTe for infrared applications. The main characteristics and advantages of this method are presented with regard to the two most important metallurgical difficulties of CdxHgl-xTe : mercury pressure and phase segregation. Metallurgical and electrical properties of the ingots are presented.

Paper Details

Date Published: 9 July 1986
PDF: 8 pages
Proc. SPIE 0587, Fiber Optic Sources and Detectors, (9 July 1986); doi: 10.1117/12.951203
Show Author Affiliations
A. Durand, Societe Anonyme de Telecommunications (France)
J. L. Dessus, Societe Anonyme de Telecommunications (France)
T. Nguyen Duy, Societe Anonyme de Telecommunications (France)

Published in SPIE Proceedings Vol. 0587:
Fiber Optic Sources and Detectors
Jean-Pierre Noblanc, Editor(s)

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