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Proceedings Paper

Direct Measurement Of Leakage Currents In Long-Wavelength Buried Heterostructure Lasers
Author(s): P. I. Kuindersma; A. Valster
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Paper Abstract

A number of modified DCPBH laser devices were realized, which can be driven as a single transistor (or as a number of parallel transistors). The devices allow direct and seperate measurement of various leakage components in DCPBH devices, i.e. electron- c.q. hole-hetero-barrier leakage and blocking layer leakage. Measurements on these devices lead to a good understanding of leakage phenomena and of device performance of DCPBH laser diodes. Measured data serve as input for accurate modelling of DCPBH devices.

Paper Details

Date Published: 9 July 1986
PDF: 3 pages
Proc. SPIE 0587, Fiber Optic Sources and Detectors, (9 July 1986); doi: 10.1117/12.951195
Show Author Affiliations
P. I. Kuindersma, Philips Research Laboratories (The Netherlands)
A. Valster, Philips Research Laboratories (The Netherlands)


Published in SPIE Proceedings Vol. 0587:
Fiber Optic Sources and Detectors
Jean-Pierre Noblanc, Editor(s)

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