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Proceedings Paper

Tunneling And Noise Phenomena In HgCdTe Photodiodes
Author(s): R. Adar; D. Rosenfeld; Y. Nemirovsky
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Paper Abstract

The reverse breakdown characteristics of 8-12μm Hg1-x CdxTe photodiodes are experimentally measured and analyzed. Temperature dependence of the currents reveal that trap-assisted and direct band-to-band tunneling processes dominate the breakdown characteristics at low and high reverse bias regions respectively. The direct band-to-band characteristics are compared to theoretical predictions in implanted diodes on both gold-doped and undoped substrates. A good quantitative fit to theory is achieved based on experimental analysis of space charge density in the measured diodes depletion region using a C-V profiling technique. The direct tunneling characteristics also show empirical correlation with noise currents measured on gold-doped junctions.

Paper Details

Date Published: 5 July 1989
PDF: 8 pages
Proc. SPIE 1038, 6th Mtg in Israel on Optical Engineering, (5 July 1989); doi: 10.1117/12.951036
Show Author Affiliations
R. Adar, Israel Institute of Technology (Israel)
D. Rosenfeld, Israel Institute of Technology (Israel)
Y. Nemirovsky, Israel Institute of Technology (Israel)

Published in SPIE Proceedings Vol. 1038:
6th Mtg in Israel on Optical Engineering
Rami Finkler; Joseph Shamir, Editor(s)

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