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Proceedings Paper

Plasma Deposited Silicon Nitride Film Chemistry
Author(s): J. N. Chiang; D. W. Hess
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Paper Abstract

The effect of deposition conditions on the structure and composition of plasma deposited (PD) silicon nitride films was studied using X-ray Photoelectron Spectroscopy (XPS) and Fourier Transform Infrared Spectroscopy (FTIR). This study focused on the line position and shape of the Si 2p and N is XPS peaks and the Si KLL Auger peak. PD silicon nitride films were transferred directly from the deposition chamber into a surface analysis system, thereby permitting analysis of as-deposited films without modification due to ion sputtering. Post-deposition Ar+ milling of PD silicon nitride films at ion energies as low as 500 eV, caused preferential removal of NH species and was thus unsuitable for surface cleaning before analysis. All films oxidized upon exposure to ambient; however, those deposited at low temperature with large quantities of NH, oxidized extensively.

Paper Details

Date Published: 15 March 1989
PDF: 9 pages
Proc. SPIE 1037, Monitoring and Control of Plasma-Enhanced Processing of Semiconductors, (15 March 1989); doi: 10.1117/12.951025
Show Author Affiliations
J. N. Chiang, University of California (United States)
D. W. Hess, University of California (United States)

Published in SPIE Proceedings Vol. 1037:
Monitoring and Control of Plasma-Enhanced Processing of Semiconductors
James E. Griffiths, Editor(s)

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