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Proceedings Paper

Preparation Of Transition Metal Sulfides Using Rf Plasma
Author(s): Donald M. Schleich; Robert Gieger; Richard McManus; John N. Carter
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Paper Abstract

The preparation of transition metal chalcogenides using classical techniques is often confronted with serious problems. We have studied the preparation of a variety of transition metal sulfides, as thin films and bulk powders, comparing thermal and rf plasma techniques. The rf plasma approach allows us to use a simple sulfurizing agent H2S to prepare materials at low temperature. Without the aid of the rf plasma we must use either exotic sulfurizing agents or higher temperatures, which may have detrimental affects on the materials. Specifically we have studied the preparation of TiS2, MoSx and VSx. In all cases we have been able to prepare films or bulk powders at temperatures below 2500C.

Paper Details

Date Published: 15 March 1989
PDF: 5 pages
Proc. SPIE 1037, Monitoring and Control of Plasma-Enhanced Processing of Semiconductors, (15 March 1989); doi: 10.1117/12.951023
Show Author Affiliations
Donald M. Schleich, Polytechnic University (United States)
Robert Gieger, Polytechnic University (United States)
Richard McManus, Polytechnic University (United States)
John N. Carter, Polytechnic University (United States)


Published in SPIE Proceedings Vol. 1037:
Monitoring and Control of Plasma-Enhanced Processing of Semiconductors
James E. Griffiths, Editor(s)

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