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Proceedings Paper

Advances In Plasma Enhanced Thin Film Deposition
Author(s): Evert P. van de Ven
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Paper Abstract

Plasma enhanced chemical vapor deposition has been used in the semiconductor industry for device passivation and interlayer dielectric applications. The primary function of the glow discharge has been to decompose the reactants to allow lower deposition temperatures. However, in addition to reducing the deposition temperature, RF plasmas can be used to control film stress, improve step coverage and conformality, and obtain exceptional uniformity and process control. Moreover, process induced defects (hillocks, particulates and pinholes) can be greatly reduced by using high rate localized deposition and in situ reactor cleaning. Examples discussed include the deposition of doped and undoped Si02/ SiN and TEOS oxides.

Paper Details

Date Published: 15 March 1989
PDF: 8 pages
Proc. SPIE 1037, Monitoring and Control of Plasma-Enhanced Processing of Semiconductors, (15 March 1989); doi: 10.1117/12.951022
Show Author Affiliations
Evert P. van de Ven, Novellus Systems, Inc. (United States)


Published in SPIE Proceedings Vol. 1037:
Monitoring and Control of Plasma-Enhanced Processing of Semiconductors
James E. Griffiths, Editor(s)

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