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Proceedings Paper

Factors Affecting Reactive Ion Etching Of Corning 7059 Glass
Author(s): Yue Kuo; J. R. Crowe
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Paper Abstract

Glass is a popular substrate for flat panel display technology. Reactive ion etching (RIE) is a method for thin film device patterning but has not yet been widely applied to this technology. One complication is the effect of RIE on glass. A conventional glass contains a complicated structure that makes its etching characteristic very different from that of SiO2. Corning 7059 glass was reactive ion etched with CF4-02 plasma (1). The optimum condition was low oxygen concentration, low pressure, and high cathode self bias voltage. The etch bottleneck step was the removal of aluminum and barium oxides. In this paper both CF4, and CF3C1 were used separately to etch Corning 7059 glass under various conditions. The effect of Teflon material on the electrode during the etch is also examined.

Paper Details

Date Published: 15 March 1989
PDF: 7 pages
Proc. SPIE 1037, Monitoring and Control of Plasma-Enhanced Processing of Semiconductors, (15 March 1989); doi: 10.1117/12.951020
Show Author Affiliations
Yue Kuo, T. J. Watson Research Center (United States)
J. R. Crowe, T. J. Watson Research Center (United States)

Published in SPIE Proceedings Vol. 1037:
Monitoring and Control of Plasma-Enhanced Processing of Semiconductors
James E. Griffiths, Editor(s)

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