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Proceedings Paper

In-Situ Diagnostics For Plasma Processing
Author(s): P. Banks; W. Pilz; I. Hussla; G. Lorenz; G. Castrischer
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Paper Abstract

The applications of optical emission spectroscopy and optical interferometry to the monitoring and control of plasma processes are considered. Results obtained by each method during reactive ion etching of a tri-level resist system and silicon dioxide are presented for several sets of etching parameters and a variety of mask patterns. Successful process control is illustrated by sub-micrometre size etched features in the tri-level system with aspect ratios up to 10:1. The value of each diagnostic tool is illustrated by reference to details and subtleties of the etch processes. Comparisons made between the informations obtained by each diagnostic method allow the complementary and often supplementary roles of optical emission spectroscopy and interferometry to be identified.

Paper Details

Date Published: 15 March 1989
PDF: 8 pages
Proc. SPIE 1037, Monitoring and Control of Plasma-Enhanced Processing of Semiconductors, (15 March 1989); doi: 10.1117/12.951013
Show Author Affiliations
P. Banks, University of Oxford (UK.)
W. Pilz, Fraunhofer-Institut fuer Mikrostrukturtechnik (FRG.)
I. Hussla, Leybold AG (Federal Republic of Germany)
G. Lorenz, Leybold AG (Federal Republic of Germany)
G. Castrischer, Leybold AG (Federal Republic of Germany)


Published in SPIE Proceedings Vol. 1037:
Monitoring and Control of Plasma-Enhanced Processing of Semiconductors
James E. Griffiths, Editor(s)

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