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Proceedings Paper

Use Of Raman Spectroscopy For The Characterization Of III-V Semiconductor Heterostructures
Author(s): Gary W. Wicks
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Paper Abstract

This paper is a review of the characterization of III-V heterostructures by Raman spectroscopy and a discussion of the potential of Raman spectroscopy as an in situ technique for the monitoring of epitaxial growth. Raman spectroscopy can be used at the high temperatures of epitaxial growth, and can yield information on the thickness, doping, composition, and quality of the growing epitaxial film. Raman measurements of 111-V materials at temperatures typical of those used in epitaxial growth are presented.

Paper Details

Date Published: 15 March 1989
PDF: 5 pages
Proc. SPIE 1037, Monitoring and Control of Plasma-Enhanced Processing of Semiconductors, (15 March 1989); doi: 10.1117/12.951012
Show Author Affiliations
Gary W. Wicks, University of Rochester (United States)

Published in SPIE Proceedings Vol. 1037:
Monitoring and Control of Plasma-Enhanced Processing of Semiconductors
James E. Griffiths, Editor(s)

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