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Proceedings Paper

Assessing Semiconductor Interfaces By Low Energy Catholuminescence Spectroscopy
Author(s): R.Enrique Viturro; Leonard J. Brilison
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Paper Abstract

Low energy cathodoluminescence spectroscopy (CLS) is a powerful new technique for characterizing the electronic structure of semiconductor surfaces and interfaces. CLS provides information on localized states, deep level surface and interface defects, and compound formation at semiconductor interfaces. This electron microscopy technique provides direct identification of reaction-induced metal/semiconductor interface states, which evolve in energy and density with multilayer metal coverages of the particular metal, and extrinsic surface states due to lattice disruption. All of these interface states can play a role in Schottky barrier formation. Unlike surface science techniques sensitive to only the outer few monolayers, low energy CLS reveals electronic structure of "buried" interfaces.

Paper Details

Date Published: 15 March 1989
PDF: 6 pages
Proc. SPIE 1037, Monitoring and Control of Plasma-Enhanced Processing of Semiconductors, (15 March 1989); doi: 10.1117/12.951011
Show Author Affiliations
R.Enrique Viturro, Xerox Webster Research Center (United States)
Leonard J. Brilison, Xerox Webster Research Center (United States)

Published in SPIE Proceedings Vol. 1037:
Monitoring and Control of Plasma-Enhanced Processing of Semiconductors
James E. Griffiths, Editor(s)

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