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Proceedings Paper

Effects Of Annealing On The Optical Properties Of Proton Irradiated n-type Gallium Arsenide
Author(s): L. L. Liou; W. G. Spitzer; J. M. Zavada; H. A. Jenkinson
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Paper Abstract

The optical properties of proton irradiated n-type GaAs, implanted at room temperature and subsequently furnace annealed, are examined using infrared reflectance spectroscopy. Substantial changes in the reflectance spectra are observed with post-implantation annealing. Computer simulations , based on a Drude model free carrier contribution to the dielectric constant, are used to obtain best fit parameters to the measured spectra. The resulting free carrier profiles display a two layer characteristic. The top layer encompasses the implanted region and remains stable with thermal treatment up to 500 C. A lower layer appears with annealing at 200 C and diffuses deeply into the substrate material. Further annealing eliminates the lower layer but the top layer is present even after a 600 C anneal. An activation energy of 1.2 eV and a diffusion preexponential factor of 4.3 E-1 cm2/s are found for this process.

Paper Details

Date Published: 11 September 1985
PDF: 7 pages
Proc. SPIE 0578, Integrated Optical Circuit Engineering II, (11 September 1985); doi: 10.1117/12.950755
Show Author Affiliations
L. L. Liou, University of Southern California (United States)
W. G. Spitzer, University of Southern California (United States)
J. M. Zavada, U. S. Army Research Office (United States)
H. A. Jenkinson, U. S. Army ARDC (United States)


Published in SPIE Proceedings Vol. 0578:
Integrated Optical Circuit Engineering II
Sriram Sriram, Editor(s)

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